EEE 550 Nanoelectronic Devices: Physics and Technology

This is a graduate-level deep dive into how modern transistors actually work at the device-physics level, starting from carrier transport in semiconductors and ending at the regime where classical models break down and quantum effects (tunneling, ballistic transport, 2D materials like graphene) take over. You'll spend the semester deriving operating equations and figures of merit for the full device zoo, p-n and Schottky junctions, MOSCAPs, BJTs, MOSFETs, nanowire FETs, HEMTs, RTDs, through regular quizzes, two midterms, and a final, working out of Sze. It assumes you've already had an undergraduate solid-state/devices course, and it's the foundation you need before doing anything serious in nanofabrication, IC design, or compound-semiconductor research.